|
|
Diodos de protección contra ESD / Diodos TVS 600W 154V Unidirect
- SMBJ154A-TR
- STMicroelectronics
-
1:
$0.14
-
8,470En existencias
|
N.º de artículo de Mouser
511-SMBJ154A
|
STMicroelectronics
|
Diodos de protección contra ESD / Diodos TVS 600W 154V Unidirect
|
|
8,470En existencias
|
|
|
$0.14
|
|
|
$0.128
|
|
|
$0.126
|
|
|
$0.125
|
|
|
$0.119
|
|
|
Ver
|
|
|
$0.124
|
|
|
$0.115
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
SMB (DO-214AA)
|
|
|
|
Diodos de protección contra ESD / Diodos TVS 3000 W, 28 V TVS in SMC
- SMC30J28A
- STMicroelectronics
-
1:
$1.16
-
2,456En existencias
|
N.º de artículo de Mouser
511-SMC30J28A
|
STMicroelectronics
|
Diodos de protección contra ESD / Diodos TVS 3000 W, 28 V TVS in SMC
|
|
2,456En existencias
|
|
|
$1.16
|
|
|
$0.942
|
|
|
$0.66
|
|
|
$0.659
|
|
|
Ver
|
|
|
$0.435
|
|
|
$0.533
|
|
|
$0.492
|
|
|
$0.435
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
SMC (DO-214AB)
|
|
|
|
Diodos de protección contra ESD / Diodos TVS 3000 W, 48 V TVS in SMC
- SMC30J48CA
- STMicroelectronics
-
1:
$1.28
-
1,858En existencias
|
N.º de artículo de Mouser
511-SMC30J48CA
|
STMicroelectronics
|
Diodos de protección contra ESD / Diodos TVS 3000 W, 48 V TVS in SMC
|
|
1,858En existencias
|
|
|
$1.28
|
|
|
$1.02
|
|
|
$0.716
|
|
|
$0.59
|
|
|
$0.498
|
|
|
Ver
|
|
|
$0.482
|
|
|
$0.478
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
SMC (DO-214AB)
|
|
|
|
Diodos de protección contra ESD / Diodos TVS 5000 W, 30 V TVS in SMC
- SMC50J30A
- STMicroelectronics
-
1:
$1.62
-
2,090En existencias
|
N.º de artículo de Mouser
511-SMC50J30A
|
STMicroelectronics
|
Diodos de protección contra ESD / Diodos TVS 5000 W, 30 V TVS in SMC
|
|
2,090En existencias
|
|
|
$1.62
|
|
|
$1.17
|
|
|
$0.825
|
|
|
$0.702
|
|
|
$0.566
|
|
|
Ver
|
|
|
$0.635
|
|
|
$0.527
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
SMC (DO-214AB)
|
|
|
|
Transistores bipolares - Transistores de empalme bipolar (BJT) High voltage fast-switching NPN power transistor
- ST13007D
- STMicroelectronics
-
1:
$2.12
-
1,336En existencias
|
N.º de artículo de Mouser
511-ST13007D
|
STMicroelectronics
|
Transistores bipolares - Transistores de empalme bipolar (BJT) High voltage fast-switching NPN power transistor
|
|
1,336En existencias
|
|
|
$2.12
|
|
|
$0.747
|
|
|
$0.675
|
|
|
$0.64
|
|
|
Ver
|
|
|
$0.596
|
|
|
$0.59
|
|
|
$0.568
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.55 Ohm typ. 7.5A
- STB10N60M2
- STMicroelectronics
-
1:
$2.43
-
1,075En existencias
|
N.º de artículo de Mouser
511-STB10N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.55 Ohm typ. 7.5A
|
|
1,075En existencias
|
|
|
$2.43
|
|
|
$1.57
|
|
|
$1.07
|
|
|
$0.868
|
|
|
$0.73
|
|
|
Ver
|
|
|
$0.70
|
|
|
$0.686
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100 Volt 35 Amp
- STB30NF10T4
- STMicroelectronics
-
1:
$2.02
-
1,412En existencias
|
N.º de artículo de Mouser
511-STB30NF10
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100 Volt 35 Amp
|
|
1,412En existencias
|
|
|
$2.02
|
|
|
$1.29
|
|
|
$0.87
|
|
|
$0.691
|
|
|
$0.564
|
|
|
Ver
|
|
|
$0.555
|
|
|
$0.531
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 230 mOhm typ., 13 A MDmesh M6 Power MOSFET in a DPAK package
- STD18N60M6
- STMicroelectronics
-
1:
$2.22
-
1,632En existencias
|
N.º de artículo de Mouser
511-STD18N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 230 mOhm typ., 13 A MDmesh M6 Power MOSFET in a DPAK package
|
|
1,632En existencias
|
|
|
$2.22
|
|
|
$1.42
|
|
|
$0.98
|
|
|
$0.784
|
|
|
$0.608
|
|
|
Ver
|
|
|
$0.699
|
|
|
$0.582
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100 Volt 25 Amp
- STD20NF10T4
- STMicroelectronics
-
1:
$1.58
-
1,981En existencias
|
N.º de artículo de Mouser
511-STD20NF10
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100 Volt 25 Amp
|
|
1,981En existencias
|
|
|
$1.58
|
|
|
$0.992
|
|
|
$0.658
|
|
|
$0.52
|
|
|
$0.398
|
|
|
Ver
|
|
|
$0.469
|
|
|
$0.366
|
|
|
$0.361
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 V 1.6 Ohm 3.3 A MDmesh II
- STD3NM60N
- STMicroelectronics
-
1:
$1.75
-
2,222En existencias
|
N.º de artículo de Mouser
511-STD3NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 V 1.6 Ohm 3.3 A MDmesh II
|
|
2,222En existencias
|
|
|
$1.75
|
|
|
$1.11
|
|
|
$0.746
|
|
|
$0.591
|
|
|
$0.459
|
|
|
Ver
|
|
|
$0.541
|
|
|
$0.451
|
|
|
$0.446
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 1.06Ohm 4.5A MDmesh M2
- STD6N60M2
- STMicroelectronics
-
1:
$1.99
-
2,265En existencias
|
N.º de artículo de Mouser
511-STD6N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 1.06Ohm 4.5A MDmesh M2
|
|
2,265En existencias
|
|
|
$1.99
|
|
|
$1.27
|
|
|
$0.861
|
|
|
$0.73
|
|
|
$0.549
|
|
|
Ver
|
|
|
$0.662
|
|
|
$0.507
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 30 V, 2 mOhm typ., 80 A, STripFET H6 Power MOSFET in DPAK package
- STD80N3LL
- STMicroelectronics
-
1:
$0.94
-
2,977En existencias
|
N.º de artículo de Mouser
511-STD80N3LL
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 30 V, 2 mOhm typ., 80 A, STripFET H6 Power MOSFET in DPAK package
|
|
2,977En existencias
|
|
|
$0.94
|
|
|
$0.662
|
|
|
$0.484
|
|
|
$0.402
|
|
|
$0.339
|
|
|
Ver
|
|
|
$0.368
|
|
|
$0.316
|
|
|
$0.313
|
|
|
$0.305
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP packag
- STF26N60M2
- STMicroelectronics
-
1:
$3.41
-
981En existencias
|
N.º de artículo de Mouser
511-STF26N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP packag
|
|
981En existencias
|
|
|
$3.41
|
|
|
$1.72
|
|
|
$1.55
|
|
|
$1.26
|
|
|
Ver
|
|
|
$1.16
|
|
|
$1.09
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
Módulos IGBT SLLIMM 2nd,3phs 600V shrt-crct
- STGIF10CH60TS-L
- STMicroelectronics
-
1:
$13.16
-
97En existencias
|
N.º de artículo de Mouser
511-STGIF10CH60TS-L
|
STMicroelectronics
|
Módulos IGBT SLLIMM 2nd,3phs 600V shrt-crct
|
|
97En existencias
|
|
Min.: 1
Mult.: 1
|
|
IGBT Modules
|
Si
|
Through Hole
|
SDIP2F-26
|
|
|
|
IGBTs 20 A - 600 V - short circuit rugged IGBT
- STGP19NC60KD
- STMicroelectronics
-
1:
$3.21
-
997En existencias
|
N.º de artículo de Mouser
511-STGP19NC60KD
|
STMicroelectronics
|
IGBTs 20 A - 600 V - short circuit rugged IGBT
|
|
997En existencias
|
|
|
$3.21
|
|
|
$1.61
|
|
|
$1.45
|
|
|
$1.18
|
|
|
Ver
|
|
|
$1.08
|
|
|
$1.01
|
|
|
$1.00
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
IGBTs Trench gate field-stop 650 V, 80 A high speed HB series IGBT
- STGW80H65DFB-4
- STMicroelectronics
-
1:
$8.26
-
258En existencias
|
N.º de artículo de Mouser
511-STGW80H65DFB-4
|
STMicroelectronics
|
IGBTs Trench gate field-stop 650 V, 80 A high speed HB series IGBT
|
|
258En existencias
|
|
|
$8.26
|
|
|
$6.01
|
|
|
$5.01
|
|
|
$3.56
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
|
|
|
|
IGBTs Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long
- STGWA50HP65FB2
- STMicroelectronics
-
1:
$3.62
-
662En existencias
|
N.º de artículo de Mouser
511-STGWA50HP65FB2
|
STMicroelectronics
|
IGBTs Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long
|
|
662En existencias
|
|
|
$3.62
|
|
|
$1.98
|
|
|
$1.35
|
|
|
$1.25
|
|
|
$1.18
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
IGBTs Trench gate field-stop IGBT, M series 650 V, 120 A low loss
- STGYA120M65DF2
- STMicroelectronics
-
1:
$9.21
-
380En existencias
|
N.º de artículo de Mouser
511-STGYA120M65DF2
|
STMicroelectronics
|
IGBTs Trench gate field-stop IGBT, M series 650 V, 120 A low loss
|
|
380En existencias
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
Max247-3
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) M5
- STI20N65M5
- STMicroelectronics
-
1:
$3.85
-
958En existencias
|
N.º de artículo de Mouser
511-STI20N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) M5
|
|
958En existencias
|
|
|
$3.85
|
|
|
$1.86
|
|
|
$1.53
|
|
|
$1.39
|
|
|
Ver
|
|
|
$1.34
|
|
|
$1.30
|
|
|
$1.29
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-262-3
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 330 mOhm typ., 7 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV
- STL13N60M6
- STMicroelectronics
-
1:
$2.60
-
2,800En existencias
|
N.º de artículo de Mouser
511-STL13N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 330 mOhm typ., 7 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV
|
|
2,800En existencias
|
|
|
$2.60
|
|
|
$1.66
|
|
|
$1.13
|
|
|
$0.924
|
|
|
$0.727
|
|
|
Ver
|
|
|
$0.834
|
|
|
$0.718
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-4
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 550V 0.066Ohm 31A MDmesh M5
- STL36N55M5
- STMicroelectronics
-
1:
$5.93
-
2,984En existencias
|
N.º de artículo de Mouser
511-STL36N55M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 550V 0.066Ohm 31A MDmesh M5
|
|
2,984En existencias
|
|
|
$5.93
|
|
|
$4.29
|
|
|
$3.11
|
|
|
$2.53
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-8x8-5
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 100V 0.020Ohm 10A STripFET VII
- STL40N10F7
- STMicroelectronics
-
1:
$2.10
-
2,086En existencias
|
N.º de artículo de Mouser
511-STL40N10F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 100V 0.020Ohm 10A STripFET VII
|
|
2,086En existencias
|
|
|
$2.10
|
|
|
$1.34
|
|
|
$0.924
|
|
|
$0.736
|
|
|
$0.57
|
|
|
Ver
|
|
|
$0.659
|
|
|
$0.548
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2
- STP24N60DM2
- STMicroelectronics
-
1:
$3.83
-
855En existencias
|
N.º de artículo de Mouser
511-STP24N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2
|
|
855En existencias
|
|
|
$3.83
|
|
|
$1.52
|
|
|
$1.50
|
|
|
$1.48
|
|
|
Ver
|
|
|
$1.38
|
|
|
$1.34
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 1.06Ohm 4.5A MDmesh M2
- STP6N60M2
- STMicroelectronics
-
1:
$2.07
-
1,797En existencias
|
N.º de artículo de Mouser
511-STP6N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 1.06Ohm 4.5A MDmesh M2
|
|
1,797En existencias
|
|
|
$2.07
|
|
|
$0.771
|
|
|
$0.767
|
|
|
$0.652
|
|
|
Ver
|
|
|
$0.596
|
|
|
$0.57
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 700V-1ohm Zener SuperMESH 7.5A
- STP9NK70ZFP
- STMicroelectronics
-
1:
$4.24
-
488En existencias
|
N.º de artículo de Mouser
511-STP9NK70ZFP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 700V-1ohm Zener SuperMESH 7.5A
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488En existencias
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$4.24
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$1.99
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$1.86
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$1.66
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Ver
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$1.52
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$1.49
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$1.47
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Presupuesto
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Min.: 1
Mult.: 1
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MOSFETs
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Si
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Through Hole
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TO-220-3
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