|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
- SCT016H120G3AG
- STMicroelectronics
-
1:
$23.31
-
871En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-SCT016H120G3AG
Nuevo producto
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
|
|
871En existencias
|
|
|
$23.31
|
|
|
$16.87
|
|
|
$16.84
|
|
|
$16.83
|
|
|
$15.72
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
112 A
|
22 mOhms
|
- 10 V, + 22 V
|
3 V
|
150 nC
|
- 55 C
|
+ 175 C
|
652 W
|
Enhancement
|
AEC-Q101
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
- SCT027H65G3AG
- STMicroelectronics
-
1:
$12.67
-
1,082En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-SCT027H65G3AG
Nuevo producto
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
|
|
1,082En existencias
|
|
|
$12.67
|
|
|
$8.88
|
|
|
$7.72
|
|
|
$7.21
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
60 A
|
39.3 mOhms
|
- 10 V, + 22 V
|
3 V
|
48.6 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3AG
- STMicroelectronics
-
1:
$17.16
-
9En existencias
-
2,000Se espera el 12/10/2026
-
Nuevo producto
|
N.º de artículo de Mouser
511-SCT025H120G3AG
Nuevo producto
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
9En existencias
2,000Se espera el 12/10/2026
|
|
|
$17.16
|
|
|
$12.18
|
|
|
$11.37
|
|
|
$10.61
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
MOSFETs de SiC Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3-7
- STMicroelectronics
-
1:
$16.79
-
100En pedido
-
Nuevo producto
|
N.º de artículo de Mouser
511-SCT025H120G3-7
Nuevo producto
|
STMicroelectronics
|
MOSFETs de SiC Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
100En pedido
|
|
|
$16.79
|
|
|
$12.99
|
|
|
$11.24
|
|
|
$11.23
|
|
|
$9.93
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
MOSFETs de SiC Silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
- SCT070H120G3-7
- STMicroelectronics
-
1,000:
$5.79
-
Plazo de entrega no en existencias 16 Semanas
-
Nuevo producto
|
N.º de artículo de Mouser
511-SCT070H120G3-7
Nuevo producto
|
STMicroelectronics
|
MOSFETs de SiC Silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
|
|
Plazo de entrega no en existencias 16 Semanas
|
|
Min.: 1,000
Mult.: 1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 10 V, + 22 V
|
3 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
|
|
