Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.  

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Resultados: 43
Seleccionar Imagen N.° de pieza Fabricante: Descripción Hoja de datos Disponibilidad Precio: (USD) Filtre los resultados en la tabla por precio unitario en función de su cantidad. Cantidad RoHS Tipo de producto Tecnología Estilo de montaje Paquete / Cubierta Polaridad del transistor
STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A 12En existencias
600Se espera el 2/4/2027
Min.: 1
Mult.: 1
: 600

SiC MOSFETS
STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H 551En existencias
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP-247-3 N-Channel
STMicroelectronics MOSFETs de SiC Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac 1,597En existencias
Min.: 1
Mult.: 1
: 3,000

SiC MOSFETS SiC SMD/SMT PowerFLAT-5 N-Channel
STMicroelectronics MOSFETs de SiC Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac 2,311En existencias
Min.: 1
Mult.: 1
: 3,000

SiC MOSFETS SiC SMD/SMT PowerFLAT-5 N-Channel
STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package 491En existencias
Min.: 1
Mult.: 1
: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package 254En existencias
600Se espera el 25/9/2026
Min.: 1
Mult.: 1
: 600

SiC MOSFETS SiC SMD/SMT HU3PAK-7 N-Channel
STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package 943En existencias
Min.: 1
Mult.: 1
: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics MOSFETs de SiC Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package 1,754En existencias
Min.: 1
Mult.: 1
: 1,800

SiC MOSFETS SiC SMD/SMT TOLL-8 N-Channel


STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package 465En existencias
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package 362En existencias
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole Hip247-4 N-Channel


STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package 305En existencias
1,200Se espera el 31/8/2026
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package 424En existencias
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP247-3 N-Channel


STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A 261En existencias
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A 377En existencias
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package 505En existencias
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP-247-3 N-Channel


STMicroelectronics MOSFETs de SiC Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package 527En existencias
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP247-4 N-Channel


STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package 481En existencias
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP247-4 N-Channel
STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A 1,080En existencias
Min.: 1
Mult.: 1
: 600

SiC MOSFETS SiC SMD/SMT HU3PAK-7 N-Channel


STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package 301En existencias
1,200Se espera el 10/8/2026
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package 49En existencias
1,000Se espera el 17/8/2026
Min.: 1
Mult.: 1
: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel


STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package 72En existencias
Min.: 1
Mult.: 1
: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A 115En existencias
Min.: 1
Mult.: 1
: 600

SiC MOSFETS SiC SMD/SMT H2PAK-2 N-Channel


STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package 76En existencias
Min.: 1
Mult.: 1
: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A 867En existencias
Min.: 1
Mult.: 1
: 1,000

SiC MOSFETS SiC SMD/SMT N-Channel
STMicroelectronics MOSFETs de SiC Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package 505En existencias
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP-247-3 N-Channel