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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET N CH 60V 95A TO-220AB
- IRFB7545PBF
- Infineon Technologies
-
1:
$1.60
-
57,284En existencias
|
N.º de artículo de Mouser
942-IRFB7545PBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET N CH 60V 95A TO-220AB
|
|
57,284En existencias
|
|
|
$1.60
|
|
|
$0.936
|
|
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$0.683
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$0.567
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|
|
Ver
|
|
|
$0.517
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|
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$0.486
|
|
|
$0.431
|
|
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$0.417
|
|
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$0.367
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Min.: 1
Mult.: 1
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Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
60 V
|
95 A
|
4.9 mOhms
|
- 20 V, 20 V
|
3.7 V
|
75 nC
|
- 55 C
|
+ 175 C
|
125 W
|
Enhancement
|
StrongIRFET
|
Tube
|
|
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET N CH 60V 110A TO-220AB
- IRFB7540PBF
- Infineon Technologies
-
1:
$2.23
-
6,756En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
942-IRFB7540PBF
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET N CH 60V 110A TO-220AB
|
|
6,756En existencias
|
|
|
$2.23
|
|
|
$1.04
|
|
|
$0.834
|
|
|
$0.709
|
|
|
Ver
|
|
|
$0.614
|
|
|
$0.575
|
|
|
$0.571
|
|
|
$0.556
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
60 V
|
110 A
|
4.2 mOhms
|
- 20 V, 20 V
|
3.7 V
|
88 nC
|
- 55 C
|
+ 175 C
|
160 W
|
Enhancement
|
StrongIRFET
|
Tube
|
|
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET N CH 60V 195A D2PAK
- IRFS7534TRLPBF
- Infineon Technologies
-
1:
$2.78
-
1,238En existencias
|
N.º de artículo de Mouser
942-IRFS7534TRLPBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET N CH 60V 195A D2PAK
|
|
1,238En existencias
|
|
|
$2.78
|
|
|
$2.46
|
|
|
$1.79
|
|
|
$1.48
|
|
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$1.29
|
|
|
$1.22
|
|
Min.: 1
Mult.: 1
:
800
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
60 V
|
195 A
|
2 mOhms
|
- 20 V, 20 V
|
3.7 V
|
186 nC
|
- 55 C
|
+ 175 C
|
294 W
|
Enhancement
|
StrongIRFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET N CH 60V 110A D2PAK
- IRFS7540TRLPBF
- Infineon Technologies
-
1:
$3.12
-
653En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
942-IRFS7540TRLPBF
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET N CH 60V 110A D2PAK
|
|
653En existencias
|
|
|
$3.12
|
|
|
$2.02
|
|
|
$1.39
|
|
|
$1.16
|
|
|
$1.08
|
|
|
$1.02
|
|
Min.: 1
Mult.: 1
:
800
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
60 V
|
110 A
|
4.2 mOhms
|
- 20 V, 20 V
|
3.7 V
|
88 nC
|
- 55 C
|
+ 175 C
|
160 W
|
Enhancement
|
StrongIRFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET N CH 60V 75A TO-220AB
- IRFB7546PBF
- Infineon Technologies
-
1:
$1.46
-
1,839En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
942-IRFB7546PBF
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET N CH 60V 75A TO-220AB
|
|
1,839En existencias
|
|
|
$1.46
|
|
|
$0.687
|
|
|
$0.578
|
|
|
$0.477
|
|
|
Ver
|
|
|
$0.429
|
|
|
$0.414
|
|
|
$0.40
|
|
|
$0.393
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
60 V
|
75 A
|
6 mOhms
|
- 20 V, 20 V
|
3.7 V
|
58 nC
|
- 55 C
|
+ 175 C
|
99 W
|
Enhancement
|
StrongIRFET
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET N CH 60V 173A D2PAK
- IRFS7537TRLPBF
- Infineon Technologies
-
1:
$2.53
-
1,334En existencias
|
N.º de artículo de Mouser
942-IRFS7537TRLPBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET N CH 60V 173A D2PAK
|
|
1,334En existencias
|
|
|
$2.53
|
|
|
$1.87
|
|
|
$1.28
|
|
|
$1.08
|
|
|
$0.873
|
|
|
$0.788
|
|
Min.: 1
Mult.: 1
:
800
|
|
|
Si
|
SMD/SMT
|
TO-263AB-3
|
N-Channel
|
1 Channel
|
60 V
|
173 A
|
3.3 mOhms
|
- 20 V, 20 V
|
3.7 V
|
142 nC
|
- 55 C
|
+ 175 C
|
230 W
|
Enhancement
|
StrongIRFET
|
Reel, Cut Tape, MouseReel
|
|
