RF7x Automotive Power MOSFETs

ROHM Semiconductor RF7x Automotive Power MOSFETs (comprising the RF7G, RF7L, and RF7P variants) are high-performance Silicon Carbide (SiC) devices designed for demanding power applications. These MOSFETs feature a 1200V voltage rating, making the ROHM RF7x MOSFETs ideal for high-voltage environments such as automotive inverters, onboard chargers, and industrial power systems. The RF7G series offers balanced characteristics suitable for general-purpose use, while the RF7L series is optimized for low conduction losses, enhancing efficiency in continuous operation scenarios like battery management and energy storage. The RF7P series excels in high-speed switching, making it well-suited for applications requiring rapid response, such as telecom equipment and LED lighting. Across all variants, key features include low ON-resistance, fast switching performance, high reliability, and compact packaging, enabling efficient and robust power conversion in both automotive and industrial sectors.

Resultados: 8
Seleccionar Imagen N.° de pieza Fabricante: Descripción Hoja de datos Disponibilidad Precio: (USD) Filtre los resultados en la tabla por precio unitario en función de su cantidad. Cantidad RoHS Modelo ECAD Tecnología Estilo de montaje Paquete / Cubierta Polaridad del transistor Número de canales Vds - Tensión disruptiva entre drenaje y fuente Id - Corriente de drenaje continua Rds On - Resistencia entre drenaje y fuente Vgs - Tensión entre puerta y fuente Vgs th - Tensión umbral entre puerta y fuente Qg - Carga de puerta Temperatura de trabajo mínima Temperatura de trabajo máxima Dp - Disipación de potencia Modo canal Empaquetado
ROHM Semiconductor Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) DFN2020 N-CH 60V 12A 2,093En existencias
Min.: 1
Mult.: 1
Carrete: 3,000
Si SMD/SMT DFN2020-8 N-Channel 1 Channel 60 V 12 A 31 mOhms 20 V 2.5 V 7.3 nC - 55 C + 150 C 23 W Enhancement Reel, Cut Tape
ROHM Semiconductor Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) DFN 100V 12A N-CH 2,100En existencias
Min.: 1
Mult.: 1
Carrete: 3,000
Si SMD/SMT DFN2020-8 N-Channel 1 Channel 100 V 12 A 59 mOhms 20 V 2.5 V 6.9 nC - 55 C + 150 C 23 W Enhancement Reel, Cut Tape
ROHM Semiconductor Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) DFN2020 N-CH 40V 12A 1,201En existencias
Min.: 1
Mult.: 1
Carrete: 3,000
Si SMD/SMT DFN2020-8 N-Channel 1 Channel 40 V 12 A 18.5 mOhms 20 V 2.5 V 8.5 nC - 55 C + 150 C 23 W Enhancement Reel, Cut Tape
ROHM Semiconductor Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) DFN2020 P-CH 40V 12A 185En existencias
3,000Se espera el 27/7/2026
Min.: 1
Mult.: 1
Carrete: 3,000
Si SMD/SMT DFN2020-8 P-Channel 1 Channel 40 V 12 A 61 mOhms - 20 V, 5 V 2.5 V 15.5 nC - 55 C + 150 C 23 W Enhancement Reel, Cut Tape
ROHM Semiconductor Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) DFN2020 N-CH 40V 12A
3,000Se espera el 23/3/2026
Min.: 1
Mult.: 1
Carrete: 3,000

Si SMD/SMT DFN2020-8 N-Channel 1 Channel 40 V 12 A 19 mOhms 4 V 2.5 V 8.5 nC - 55 C + 150 C 23 W Enhancement Reel, Cut Tape
ROHM Semiconductor Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) DFN2020 P-CH 60V 12A
2,900Se espera el 26/3/2026
Min.: 1
Mult.: 1
Carrete: 3,000

Si SMD/SMT DFN2020-8 P-Channel 1 Channel 60 V 12 A 119 mOhms - 20 V, 5 V 2.5 V 15.7 nC - 55 C + 150 C 23 W Enhancement Reel, Cut Tape
ROHM Semiconductor Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) DFN2020 N-CH 60V 12A
3,000Se espera el 23/3/2026
Min.: 1
Mult.: 1
Carrete: 3,000

Si SMD/SMT DFN2020-8 N-Channel 1 Channel 60 V 12 A 31 mOhms 20 V 2.5 V 7.5 nC - 55 C + 150 C 23 W Enhancement Reel, Cut Tape
ROHM Semiconductor Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) DFN 100V 12A N-CH
3,000Se espera el 5/3/2026
Min.: 1
Mult.: 1
Carrete: 3,000

Si SMD/SMT DFN2020-8 N-Channel 1 Channel 100 V 12 A 31 mOhms 20 V 4 V 6.8 nC - 55 C + 150 C 23 W Enhancement Reel, Cut Tape