|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPT60R080G7XTMA1
- Infineon Technologies
-
1:
$7.12
-
1,700En existencias
|
N.º de artículo de Mouser
726-IPT60R080G7XTMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,700En existencias
|
|
|
$7.12
|
|
|
$4.76
|
|
|
$3.83
|
|
|
$3.41
|
|
|
$2.74
|
|
|
$2.73
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
29 A
|
80 mOhms
|
- 30 V, 30 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
167 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPDD60R125G7XTMA1
- Infineon Technologies
-
1:
$5.35
-
665En existencias
|
N.º de artículo de Mouser
726-IPDD60R125G7XTM1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
665En existencias
|
|
|
$5.35
|
|
|
$3.36
|
|
|
$2.54
|
|
|
$2.19
|
|
|
$1.89
|
|
|
Ver
|
|
|
$2.03
|
|
|
$1.72
|
|
Min.: 1
Mult.: 1
:
1,700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
125 mOhms
|
- 20 V, 20 V
|
3 V
|
27 nC
|
- 55 C
|
+ 150 C
|
120 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPDD60R080G7XTMA1
- Infineon Technologies
-
1:
$8.29
-
1,199En existencias
|
N.º de artículo de Mouser
726-IPDD60R080G7XTM1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,199En existencias
|
|
|
$8.29
|
|
|
$5.58
|
|
|
$3.89
|
|
|
$3.39
|
|
|
$3.02
|
|
|
$3.01
|
|
Min.: 1
Mult.: 1
:
1,700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
29 A
|
80 mOhms
|
- 20 V, 20 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
174 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER NEW
- IPT60R102G7XTMA1
- Infineon Technologies
-
1:
$6.44
-
1,098En existencias
|
N.º de artículo de Mouser
726-IPT60R102G7XTMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER NEW
|
|
1,098En existencias
|
|
|
$6.44
|
|
|
$4.26
|
|
|
$3.10
|
|
|
$2.72
|
|
|
$2.46
|
|
|
$2.35
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
23 A
|
88 mOhms
|
- 20 V, 20 V
|
3 V
|
34 nC
|
- 55 C
|
+ 150 C
|
141 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPDD60R050G7XTMA1
- Infineon Technologies
-
1:
$12.76
-
25En existencias
|
N.º de artículo de Mouser
726-IPDD60R050G7XTM1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
25En existencias
|
|
|
$12.76
|
|
|
$8.80
|
|
|
$6.56
|
|
|
$5.83
|
|
|
$5.10
|
|
|
$5.10
|
|
Min.: 1
Mult.: 1
:
1,700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
47 A
|
50 mOhms
|
- 20 V, 20 V
|
3 V
|
68 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPT60R050G7XTMA1
- Infineon Technologies
-
1:
$12.54
-
30En existencias
-
2,000En pedido
|
N.º de artículo de Mouser
726-IPT60R050G7XTMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
30En existencias
2,000En pedido
|
|
|
$12.54
|
|
|
$8.64
|
|
|
$5.80
|
|
|
$5.16
|
|
|
$4.94
|
|
|
$4.93
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
44 A
|
50 mOhms
|
- 20 V, 20 V
|
3 V
|
68 nC
|
- 55 C
|
+ 150 C
|
245 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPDD60R150G7XTMA1
- Infineon Technologies
-
1:
$4.69
-
148En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-IPDD60R150G7XTM1
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
148En existencias
|
|
|
$4.69
|
|
|
$3.07
|
|
|
$2.29
|
|
|
$1.92
|
|
|
$1.65
|
|
|
Ver
|
|
|
$1.78
|
|
|
$1.50
|
|
Min.: 1
Mult.: 1
:
1,700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
150 mOhms
|
- 20 V, 20 V
|
3 V
|
23 nC
|
- 55 C
|
+ 150 C
|
95 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER NEW
- IPT60R028G7XTMA1
- Infineon Technologies
-
1:
$19.15
-
1,950Se espera el 15/7/2026
|
N.º de artículo de Mouser
726-IPT60R028G7XTMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER NEW
|
|
1,950Se espera el 15/7/2026
|
|
|
$19.15
|
|
|
$14.42
|
|
|
$11.77
|
|
|
$11.24
|
|
|
$10.32
|
|
|
$9.42
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
75 A
|
28 mOhms
|
- 20 V, 20 V
|
3 V
|
123 nC
|
- 55 C
|
+ 150 C
|
391 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPDD60R190G7XTMA1
- Infineon Technologies
-
1:
$3.67
-
Plazo de entrega no en existencias 39 Semanas
|
N.º de artículo de Mouser
726-IPDD60R190G7XTM1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
Plazo de entrega no en existencias 39 Semanas
|
|
|
$3.67
|
|
|
$2.33
|
|
|
$1.64
|
|
|
$1.37
|
|
|
$1.35
|
|
|
$1.35
|
|
Min.: 1
Mult.: 1
:
1,700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
190 mOhms
|
- 20 V, 20 V
|
3 V
|
18 nC
|
- 55 C
|
+ 150 C
|
76 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER NEW
- IPT60R125G7XTMA1
- Infineon Technologies
-
1:
$5.15
-
Plazo de entrega no en existencias 15 Semanas
-
NRND
|
N.º de artículo de Mouser
726-IPT60R125G7XTMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER NEW
|
|
Plazo de entrega no en existencias 15 Semanas
|
|
|
$5.15
|
|
|
$3.33
|
|
|
$2.49
|
|
|
$2.08
|
|
|
$1.83
|
|
|
Ver
|
|
|
$1.94
|
|
|
$1.73
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
108 mOhms
|
- 20 V, 20 V
|
3 V
|
27 nC
|
- 55 C
|
+ 150 C
|
120 W
|
Enhancement
|
|
Reel, Cut Tape
|
|