|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
- NTMFS1D1N04XMT1G
- onsemi
-
1:
$2.43
-
2,344En existencias
|
N.º de artículo de Mouser
863-NTMFS1D1N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
|
|
2,344En existencias
|
|
|
$2.43
|
|
|
$1.56
|
|
|
$1.06
|
|
|
$0.846
|
|
|
$0.715
|
|
|
$0.715
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
233 A
|
1.05 mOhms
|
- 20 V, 20 V
|
3.5 V
|
49.1 nC
|
- 55 C
|
+ 175 C
|
104 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
- NTMFS2D3N04XMT1G
- onsemi
-
1:
$1.69
-
5,932En existencias
|
N.º de artículo de Mouser
863-NTMFS2D3N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
|
|
5,932En existencias
|
|
|
$1.69
|
|
|
$1.08
|
|
|
$0.716
|
|
|
$0.563
|
|
|
$0.514
|
|
|
$0.469
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
111 A
|
2.35 mOhms
|
- 20 V, 20 V
|
3.5 V
|
22.1 nC
|
- 55 C
|
+ 175 C
|
53 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
- NTMFS0D4N04XMT1G
- onsemi
-
1:
$4.10
-
102En existencias
-
6,000En pedido
|
N.º de artículo de Mouser
863-NTMFS0D4N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
|
|
102En existencias
6,000En pedido
Existencias:
102 Se puede enviar inmediatamente
En pedido:
4,500 Se espera el 28/5/2027
1,500 Se espera el 1/9/2027
Plazo de entrega de fábrica:
52 Semanas
|
|
|
$4.10
|
|
|
$2.68
|
|
|
$1.95
|
|
|
$1.95
|
|
Min.: 1
Mult.: 1
Máx.: 390
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
509 A
|
420 uOhms
|
- 20 V, 20 V
|
3.5 V
|
133 nC
|
- 55 C
|
+ 175 C
|
197 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
- NTMFS0D5N04XMT1G
- onsemi
-
1:
$3.66
-
119En existencias
-
7,500Se espera el 17/7/2026
|
N.º de artículo de Mouser
863-NTMFS0D5N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
|
|
119En existencias
7,500Se espera el 17/7/2026
|
|
|
$3.66
|
|
|
$2.38
|
|
|
$1.67
|
|
|
$1.39
|
|
|
$1.21
|
|
|
$1.21
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
414 A
|
520 uOhms
|
- 20 V, 20 V
|
3.5 V
|
97.5 nC
|
- 55 C
|
+ 175 C
|
163 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
- NTMFS0D6N04XMT1G
- onsemi
-
1:
$3.40
-
131En existencias
-
4,500Se espera el 8/6/2027
|
N.º de artículo de Mouser
863-NTMFS0D6N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
|
|
131En existencias
4,500Se espera el 8/6/2027
|
|
|
$3.40
|
|
|
$2.21
|
|
|
$1.52
|
|
|
$1.21
|
|
|
$1.10
|
|
|
$1.10
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
380 A
|
570 uOhms
|
- 20 V, 20 V
|
3.5 V
|
86.4 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
- NTMFS1D3N04XMT1G
- onsemi
-
1:
$2.18
-
279En existencias
-
1,500Se espera el 21/8/2026
|
N.º de artículo de Mouser
863-NTMFS1D3N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
|
|
279En existencias
1,500Se espera el 21/8/2026
|
|
|
$2.18
|
|
|
$1.39
|
|
|
$0.932
|
|
|
$0.755
|
|
|
$0.677
|
|
|
$0.677
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
195 A
|
1.3 mOhms
|
- 20 V, 20 V
|
3.5 V
|
38.5 nC
|
- 55 C
|
+ 175 C
|
90 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
- NTMFS0D7N04XMT1G
- onsemi
-
1:
$2.63
-
34En existencias
-
19,500En pedido
|
N.º de artículo de Mouser
863-NTMFS0D7N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
|
|
34En existencias
19,500En pedido
Existencias:
34 Se puede enviar inmediatamente
En pedido:
4,500 Se espera el 23/4/2027
7,500 Se espera el 28/5/2027
Plazo de entrega de fábrica:
52 Semanas
|
|
|
$2.63
|
|
|
$1.70
|
|
|
$1.19
|
|
|
$0.928
|
|
|
$0.798
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
323 A
|
700 uOhms
|
- 20 V, 20 V
|
3.5 V
|
72.1 nC
|
- 55 C
|
+ 175 C
|
134 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
- NTMFS3D1N04XMT1G
- onsemi
-
1:
$1.83
-
51En existencias
-
1,500Se espera el 24/7/2026
|
N.º de artículo de Mouser
863-NTMFS3D1N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
|
|
51En existencias
1,500Se espera el 24/7/2026
|
|
|
$1.83
|
|
|
$1.13
|
|
|
$0.639
|
|
|
$0.506
|
|
|
$0.404
|
|
|
$0.404
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
83 A
|
3.1 mOhms
|
- 20 V, 20 V
|
3.5 V
|
15.6 nC
|
- 55 C
|
+ 175 C
|
39 W
|
Enhancement
|
Reel, Cut Tape
|
|