|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
- NTMFS0D4N04XMT1G
- onsemi
-
1:
$3.74
-
3,345En existencias
|
N.º de artículo de Mouser
863-NTMFS0D4N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
|
|
3,345En existencias
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
509 A
|
420 uOhms
|
- 20 V, 20 V
|
3.5 V
|
133 nC
|
- 55 C
|
+ 175 C
|
197 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
- NTMFS0D6N04XMT1G
- onsemi
-
1:
$3.27
-
6,000En existencias
|
N.º de artículo de Mouser
863-NTMFS0D6N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
|
|
6,000En existencias
|
|
|
$3.27
|
|
|
$2.11
|
|
|
$1.51
|
|
|
$1.26
|
|
|
$1.17
|
|
|
$1.09
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
380 A
|
570 uOhms
|
- 20 V, 20 V
|
3.5 V
|
86.4 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
- NTMFS1D1N04XMT1G
- onsemi
-
1:
$2.27
-
2,508En existencias
|
N.º de artículo de Mouser
863-NTMFS1D1N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
|
|
2,508En existencias
|
|
|
$2.27
|
|
|
$1.46
|
|
|
$0.99
|
|
|
$0.791
|
|
|
$0.749
|
|
|
$0.715
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
233 A
|
1.05 mOhms
|
- 20 V, 20 V
|
3.5 V
|
49.1 nC
|
- 55 C
|
+ 175 C
|
104 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
- NTMFS1D3N04XMT1G
- onsemi
-
1:
$2.17
-
6,600En existencias
|
N.º de artículo de Mouser
863-NTMFS1D3N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
|
|
6,600En existencias
|
|
|
$2.17
|
|
|
$1.38
|
|
|
$0.921
|
|
|
$0.754
|
|
|
$0.632
|
|
|
Ver
|
|
|
$0.668
|
|
|
$0.60
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
195 A
|
1.3 mOhms
|
- 20 V, 20 V
|
3.5 V
|
38.5 nC
|
- 55 C
|
+ 175 C
|
90 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
- NTMFS2D3N04XMT1G
- onsemi
-
1:
$1.58
-
5,923En existencias
|
N.º de artículo de Mouser
863-NTMFS2D3N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
|
|
5,923En existencias
|
|
|
$1.58
|
|
|
$1.01
|
|
|
$0.668
|
|
|
$0.526
|
|
|
$0.488
|
|
|
$0.466
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
111 A
|
2.35 mOhms
|
- 20 V, 20 V
|
3.5 V
|
22.1 nC
|
- 55 C
|
+ 175 C
|
53 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
- NTMFS0D7N04XMT1G
- onsemi
-
1:
$2.67
-
180En existencias
-
16,500En pedido
|
N.º de artículo de Mouser
863-NTMFS0D7N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
|
|
180En existencias
16,500En pedido
Existencias:
180 Se puede enviar inmediatamente
En pedido:
4,500 Se espera el 10/7/2026
12,000 Se espera el 14/4/2027
Plazo de entrega de fábrica:
43 Semanas
|
|
|
$2.67
|
|
|
$1.70
|
|
|
$1.18
|
|
|
$1.00
|
|
|
$0.889
|
|
|
$0.889
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
323 A
|
700 uOhms
|
- 20 V, 20 V
|
3.5 V
|
72.1 nC
|
- 55 C
|
+ 175 C
|
134 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
- NTMFS3D1N04XMT1G
- onsemi
-
1:
$1.38
-
1,343En existencias
-
1,500Se espera el 23/6/2026
|
N.º de artículo de Mouser
863-NTMFS3D1N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
|
|
1,343En existencias
1,500Se espera el 23/6/2026
|
|
|
$1.38
|
|
|
$0.866
|
|
|
$0.573
|
|
|
$0.449
|
|
|
$0.40
|
|
|
Ver
|
|
|
$0.417
|
|
|
$0.376
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
83 A
|
3.1 mOhms
|
- 20 V, 20 V
|
3.5 V
|
15.6 nC
|
- 55 C
|
+ 175 C
|
39 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
- NTMFS0D5N04XMT1G
- onsemi
-
1:
$3.49
-
10,500Se espera el 28/4/2026
|
N.º de artículo de Mouser
863-NTMFS0D5N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
|
|
10,500Se espera el 28/4/2026
|
|
|
$3.49
|
|
|
$2.26
|
|
|
$1.66
|
|
|
$1.39
|
|
|
$1.29
|
|
|
$1.29
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
414 A
|
520 uOhms
|
- 20 V, 20 V
|
3.5 V
|
97.5 nC
|
- 55 C
|
+ 175 C
|
163 W
|
Enhancement
|
Reel, Cut Tape
|
|