TJ10S04M3L,LXHQ
Las imágenes son para referencia solamente
Ver especificaciones del producto
Ver especificaciones del producto
757-TJ10S04M3L,LXHQ
TJ10S04M3L,LXHQ
Fabricante:
Descripción:
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 27W 1MHz Automotive; AEC-Q101
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 27W 1MHz Automotive; AEC-Q101
Hoja de datos:
En existencias: 19,147
-
Existencias:
-
19,147 Se puede enviar inmediatamenteSe ha producido un error inesperado. Vuelva a intentarlo más tarde.
Precio (USD)
| Cantidad | Precio unitario |
Precio ext.
|
|---|---|---|
| $0.91 | $0.91 | |
| $0.703 | $7.03 | |
| $0.488 | $48.80 | |
| $0.408 | $204.00 | |
| $0.372 | $372.00 | |
| Envase tipo carrete completo (pedir en múltiplos de 2000) | ||
| $0.33 | $660.00 | |
| $0.315 | $1,260.00 | |
| $0.314 | $3,140.00 | |
| $0.302 | $7,248.00 | |
Hoja de datos
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
Models
Product Catalogs
Test/Quality Data
- CNHTS:
- 8541290000
- USHTS:
- 8541290065
- TARIC:
- 8541290000
- ECCN:
- EAR99
Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2