IKP20N60T

Infineon Technologies
726-IKP20N60T
IKP20N60T

Fabricante:

Descripción:
IGBTs LOW LOSS DuoPack 600V 20A

Ciclo de vida:
Fin de vida útil:
Se encuentra obsoleto y será discontinuado por el fabricante.
Modelo ECAD:
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En existencias: 11

Existencias:
11 Se puede enviar inmediatamente
Plazo de entrega de fábrica:
19 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Mínimo: 1   Múltiples: 1
Precio unitario:
$-.--
Precio ext.:
$-.--
Est. Tarifa:

Precio (USD)

Cantidad Precio unitario
Precio ext.
$2.68 $2.68
$1.55 $15.50
$1.23 $123.00
$0.97 $485.00
$0.831 $831.00
$0.799 $3,995.00

Atributo del producto Valor de atributo Seleccionar atributo
Infineon
Categoría de producto: IGBTs
RoHS:  
Si
TO-220-3
Through Hole
Single
600 V
1.5 V
- 20 V, 20 V
41 A
166 W
- 40 C
+ 175 C
TRENCHSTOP IGBT
Tube
Marca: Infineon Technologies
Corriente de fuga puerta-emisor: 100 nA
Tipo de producto: IGBT Transistors
Cantidad de empaque de fábrica: 500
Subcategoría: IGBTs
Nombre comercial: TRENCHSTOP
Alias de las piezas n.º: SP000683066 IKP2N6TXK IKP20N60TXKSA1
Peso de la unidad: 6 g
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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

Ultrafast 600V Trench IGBTs

Infineon Ultrafast 600V Trench IGBTs are rugged, reliable Insulated Gate Bipolar Transistors optimized for Uninterruptible Power Supplies (UPS), solar, industrial motor, and welding applications. These Ultrafast 600V Trench IGBTs utilize Trench thin wafer technology to offer lower conduction and switching losses. Infineon Ultrafast 600V Trench IGBTs are co-packaged with a soft recovery low Qrr diode. These devices are ideal for ultra-fast switching (8KHz to 30KHz) applications with 5µs short circuit rating. They feature low Vce(on) and positive Vce(on) temperature coefficient for easy paralleling.

IGBT Gate Drives with Murata DC-DC Converters

Infineon IGBTs are commonly used in high-power inverter and converter circuits that require significant isolated gate drive power to switch optimally. Murata small isolated DC/DC converters can provide that power. The same considerations apply in principle to gate drives for silicon, silicon carbide, and gallium nitride MOSFETs.

300V to 1200V IGBTs

Infineon 300-1200V IGBTs have an extensive portfolio of IGBTs that achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.