IXFP90N20X3M

IXYS
747-IXFP90N20X3M
IXFP90N20X3M

Fabricante:

Descripción:
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO220 200V 90A N-CH X3CLASS

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En existencias: 35

Existencias:
35 Se puede enviar inmediatamente
Plazo de entrega de fábrica:
27 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Las cantidades superiores a 35 estarán sujetas a requisitos mínimos de pedido.
Mínimo: 1   Múltiples: 1
Precio unitario:
$-.--
Precio ext.:
$-.--
Est. Tarifa:

Precio (USD)

Cantidad Precio unitario
Precio ext.
$10.54 $10.54
$6.91 $69.10
$5.31 $531.00
$4.80 $2,400.00

Atributo del producto Valor de atributo Seleccionar atributo
IXYS
Categoría de producto: Transistor metal-óxido-semiconductor de efecto de campo (MOSFET)
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
200 V
90 A
12.8 mOhms
- 20 V, 20 V
2.5 V
78 nC
- 55 C
+ 150 C
36 W
Enhancement
HiPerFET
Tube
Marca: IXYS
Configuración: Single
País de ensamblaje: Not Available
País de difusión: Not Available
País de origen: KR
Tiempo de caída: 13 ns
Transconductancia hacia delante - Mín.: 40 S
Tipo de producto: MOSFETs
Tiempo de subida: 26 ns
Cantidad de empaque de fábrica: 50
Subcategoría: Transistors
Tipo de transistor: 1 N-Channel
Tiempo de retardo de apagado típico: 62 ns
Tiempo típico de demora de encendido: 22 ns
Peso de la unidad: 2 g
Productos encontrados:
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Atributos seleccionados: 0

Hoja de datos

PCN

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CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

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